Strain-induced in-plane optical anisotropy in (001) GaAs∕AlGaAs superlattice studied by reflectance difference spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference19 articles.
1. Reflectance spectroscopy on GaAs-Ga0.5Al0.5As single quantum wells under in-plane uniaxial stress at liquid-helium temperature
2. Enhanced optical polarization anisotropy in quantum wells under anisotropic tensile strain
3. Room temperature optical absorption characteristics of GaAs/AlGaAs multiple quantum well structures under external anisotropic strain
4. Electrooptic polarization modulation in [110]-oriented GaAs-InGaAs multiple quantum wells
5. Spectroscopic method of strain analysis in semiconductor quantum-well devices
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1. Tuning of circular photogalvanic effect of surface states in the topological insulator Sb2Te3 via structural deformation;Applied Physics Letters;2022-02-07
2. Quantum magneto-transport properties of GaAs/AlxGa1-xAs Weakly coupled quantum wells for near wavelength infrared detection;Computational Condensed Matter;2021-09
3. Effects of Strain in Low-Dimensional Semiconductor Structures;Nanoscience and Nanotechnology Letters;2017-07-01
4. Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2016-07
5. Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells;Journal of Applied Physics;2015-01-07
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