Barrier height lowering of Schottky contacts on AlInAs layers grown by metal‐organic chemical‐vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353245
Reference12 articles.
1. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length
2. W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
3. The effect of interface and alloy quality on the DC and RF performance of Ga/sub 0.47/In/sub 0.53/As-Al/sub 0.48/In/sub 0.52/As HEMTs
4. Self-aligned 0.25μm W/Ti/Au gate process for high-performance pseudomorphic InAlAs/InGaAs HEMT
5. Characterization of surface-undoped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistors
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