Characterization of surface-undoped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistors-Reference-Cited by-同舟云学术

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Characterization of surface-undoped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistors

Published:1990 Issue:10 Volume:37 Page:2165-2170
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pao Y.-C.,Nishimoto C.K.,Majidi-Ahy R.,Archer J.,Bechtel N.G.,Harris J.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/2181/00059905.pdf?arnumber=59905

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Electron Mobility Transistors (HEMTs);Electrical Engineering Handbook;2007-12-22

2. High Electron Mobility Transistors;RF and Microwave Semiconductor Device Handbook;2002-10-28

3. An updated temperature-dependent breakdown coupling model including both impact ionization and tunneling mechanisms for AlGaAs/InGaAs HEMTs;IEEE Transactions on Electron Devices;2002-09

4. A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135GHz cut-off frequency;Microelectronics Journal;2001-12

5. Heterojunction Transistors at Low Temperature;Device and Circuit Cryogenic Operation for Low Temperature Electronics;2001

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