In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)-Reference-Cited by-同舟云学术

In situ study of the endotaxial growth of hexagonal CoSi2 nanoplatelets in Si(001)

Published:2015-11-30 Issue:22 Volume:107 Page:223101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

da Silva Costa Daniel¹,Huck-Iriart Cristián²,Kellermann Guinther¹,Giovanetti Lisandro J.²,Craievich Aldo F.³,Requejo Félix G.²

Affiliation:

1. Departamento de Física, Universidade Federal do Paraná, Caixa Postal 19044, Curitiba, Paraná 81531-990, Brazil

2. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas (INIFTA, CONICET, Departamento de Química, Facultad de Ciencias Exactas, Universidad Nacional de La Plata), CC/16 suc. 4, 1900 La Plata, Argentina

3. Instituto de Física, Universidade de São Paulo, CP 66318, CEP 05315-970, São Paulo, Brazil

Funder

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936377

Reference36 articles.

1. Formation of Self-Assembled Nanoplates via Hydrogenation of Epitaxial Pd Film

2. Mechanistic Investigation of the Growth of Fe1−xCoxSi (0 ≤ x ≤ 1) and Fe5(Si1−yGey)3 (0 ≤ y ≤ 0.33) Ternary Alloy Nanowires

3. Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices

4. Shape-Controlled Fabrication of Micro/Nanoscale Triangle, Square, Wire-like, and Hexagon Pits on Silicon Substrates Induced by Anisotropic Diffusion and Silicide Sublimation

5. Homogeneous Nucleation of Epitaxial CoSi2 and NiSi in Si Nanowires

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