Unipolar vertical transport in GaN/AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4813309
Reference22 articles.
1. AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition
2. Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes
3. Charge distribution and vertical electron transport through GaN/AlN/GaN single-barrier structures
4. Room‐temperature operation of hot‐electron transistors
5. Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base
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