Ge doped GaN with controllable high carrier concentration for plasmonic applications-Reference-Cited by-同舟云学术

Ge doped GaN with controllable high carrier concentration for plasmonic applications

Published:2013-12-09 Issue:24 Volume:103 Page:242107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kirste Ronny,Hoffmann Marc P.,Sachet Edward,Bobea Milena,Bryan Zachary,Bryan Isaac,Nenstiel Christian,Hoffmann Axel,Maria Jon-Paul,Collazo Ramón,Sitar Zlatko

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4848555

Reference19 articles.

1. Plasmonics for future biosensors

2. Know your molecules

3. Strain in Si doped GaN and the Fermi level effect

4. n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy

5. High Si and Ge n-type doping of GaN doping - Limits and impact on stress

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