Impact of axial strain on drain current of carbon-nanotube field-effect transistors with doped junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2813016
Reference10 articles.
1. A Numerical Study of Scaling Issues for Schottky-Barrier Carbon Nanotube Transistors
2. A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry
3. A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry
4. Electromechanical Properties of Metallic, Quasimetallic, and Semiconducting Carbon Nanotubes under Stretching
5. Physical Properties of Carbon Nanotubes
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1. Effect of uniaxial strain on electrical properties of CNT-based junctionless field-effect transistor: Numerical study;Superlattices and Microstructures;2016-05
2. A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS;International Journal of Modern Physics B;2012-09-27
3. Optimization of Source/Drain Doping Level of Carbon Nanotube Field-Effect Transistors to Suppress OFF-State Leakage Current while Keeping Ideal ON-State Current;Japanese Journal of Applied Physics;2012-06-20
4. Optimization of Source/Drain Doping Level of Carbon Nanotube Field-Effect Transistors to Suppress OFF-State Leakage Current while Keeping Ideal ON-State Current;Japanese Journal of Applied Physics;2012-06-01
5. THE EFFECT OF CARBON NANOTUBE CHIRALITY ON THE PERFORMANCE OF THE STRAINED TUNNELING CARBON NANOTUBE FETs;Modern Physics Letters B;2012-01-30
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