A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

Abstract

In this paper, the transport properties of the band-to-band-tunneling carbon nanotube field-effect transistors (BTBT-CNTFETs) under uniaxial strain are studied, with the nonequilibrium Green's function (NEGF) formalism. The effects of the uniaxial strain on the electrical properties, such as the ON current (I ON ), OFF current (I OFF ), I ON /I OFF ratio, subthreshold swing and intrinsic delay are evaluated. It was observed that the uniaxial strain has strong effects on the transport properties of these transistors. The results show that appropriate uniaxial strain, although degrades the ON current and the intrinsic delay, it also decreases the power consumption of the BTBT-CNTFETs and as a result can be used for low-power applications.