Improving the Current Ratio and Ambipolar Behavior of Junctionless CNTFETs Using Graded Metal Gate Work Function: A Quantum Simulation
Author:
Affiliation:
1. Université 8 Mai 1945 Guelma,Department of Electronics and Telecommunications,Guelma,Algeria,24000
2. LAADI Laboratory, Faculty of Science and Technology,University Ziane Achour of Djelfa,Algeria
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9955493/9955494/09955940.pdf?arnumber=9955940
Reference39 articles.
1. Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study
2. Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance
3. Leveraging Negative Capacitance CNTFETs for Image Processing: An Ultra-Efficient Ternary Image Edge Detection Hardware
4. Ultra-Compact Ternary Logic Gates Based on Negative Capacitance Carbon Nanotube FETs
5. A new pressure microsensor based on dual-gate graphene field-effect transistor with a vertically movable top-gate: Proposal, analysis, and optimization
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