THE EFFECT OF CARBON NANOTUBE CHIRALITY ON THE PERFORMANCE OF THE STRAINED TUNNELING CARBON NANOTUBE FETs

Abstract

In this paper, using the non-equilibrium Green's function formalism (NEGF), the effect of the chirality of carbon nanotube (CNT) on the performance of the strained tunneling carbon nanotube field effect transistors (T-CNTFETs) has been investigated. In this work, all evaluations are done by this assumption that the ON current, I ON , is the main performance metric in the T-CNTFETs. The uniaxial strain has been considered in this work. On the other hand, for constructing a transistor with a desired I ON , a variety of CNTs with the appropriate uniaxial strain could be used. The results of doing some comparisons among these situations show that, the use of the small diameter CNTs with the appropriate uniaxial strain could lead to the transistors with the better switching behavior. Likewise, the use of the large diameter CNTs with the appropriate uniaxial strain could result to the transistors with a higher I ON /I OFF ratio.