Thermal nitridation passivation dependent band offset and electrical properties of AlOxNy/GaAs gate stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3229922
Reference18 articles.
1. Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates
2. Surface preparation and effective contact formation for GaAs surface
3. New anodic native oxide of GaAs with improved dielectric and interface properties
4. Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface
5. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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3. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system;AIP Advances;2015-08
4. Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer;ACS Applied Materials & Interfaces;2014-12-15
5. Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics;Journal of Materials Science: Materials in Electronics;2014-07-09
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