Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1347399
Reference21 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
3. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
4. Photovoltaic effects in GaN structures with p‐n junctions
5. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
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