Temperature Dependence of Low-Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures
Author:
Affiliation:
1. Institute of Microelectronics Technology RAS; 142432 Chernogolovka Russia
2. National University of Science and Technology MISiS; Moscow Russia
Funder
Ministry of Education and Science of the Russian Federation
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201700646/fullpdf
Reference40 articles.
1. Low energy electron irradiation effect on optical and electrical properties of InGaN/GaN multiple quantum well structures
2. Direct Observation of Pyroelectric Fields in InGaN/GaN and AlGaN/GaN Heterostructures
3. Low‐energy electron‐beam irradiation of GaN‐based quantum well structures
4. Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose
5. Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures
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