Surface impurity gradients in epitaxial GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91562
Reference12 articles.
1. Impurity gradients caused by surface states and substrate doping in epitaxial GaAs
2. Self‐compensation of donors in high‐purity GaAs
3. Ionization Interaction between Impurities in Semiconductors and Insulators
4. Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAs
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2. Fermi energy tuning with light to control doping profiles during epitaxy;Applied Physics Letters;2015-05-04
3. Chapter 1 Delta-Doping of Semiconductors: Electronic, Optical, and Structural Properties of Materials and Devices;Semiconductors and Semimetals;1994
4. Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study;Journal of Crystal Growth;1991-05
5. Fermi-level-pinning-induced impurity redistribution in semiconductors during epitaxial growth;Physical Review B;1990-07-15
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