Fermi energy tuning with light to control doping profiles during epitaxy
Author:
Affiliation:
1. Materials Science Center, National Renewable Energy Laboratory, Golden, Colorado 80401, USA
Funder
U.S. Department of Energy (Department of Energy)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4921047
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1. Amphoteric native defects in semiconductors
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5. Mechanisms of doping‐enhanced superlattice disordering and of gallium self‐diffusion in GaAs
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