Performance of metal-semiconductor field effect transistors on mist chemical-vapor-deposition grown ZnO channels with intentionally oxidized AgOx Schottky contact gates-Reference-Cited by-同舟云学术

Performance of metal-semiconductor field effect transistors on mist chemical-vapor-deposition grown ZnO channels with intentionally oxidized AgOx Schottky contact gates

Published:2021-11-07 Issue:17 Volume:130 Page:174506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Onyema Chikezie C.¹²^ORCID,Reeves Roger J.¹²^ORCID,Allen Martin W.²³^ORCID

Affiliation:

1. School of Physical and Chemical Sciences, University of Canterbury, Christchurch 8140, New Zealand

2. MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington 6012, New Zealand

3. Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand

Funder

MacDiarmid Institute for Advanced Materials and Nanotechnology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0069287

Reference57 articles.

1. A comprehensive review of ZnO materials and devices

2. Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

3. Zinc oxide light-emitting diodes: a review

4. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

5. Fundamentals of zinc oxide as a semiconductor

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