Role of magnesium in band gap engineering of sub-monolayer type-II ZnTe quantum dots embedded in ZnSe
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3611418
Reference24 articles.
1. Optical properties and growth mechanism of multiple type-IIZnTe∕ZnSequantum dots grown by migration-enhanced epitaxy
2. Tight-binding study of ZnSe/ZnTe strained superlattices: Determination of the band offset from the optical properties
3. Blue‐Green Diode Lasers
4. Predictor ofp-type doping in II-VI semiconductors
5. Enhancement of p-type doping of ZnSe using a modified (N+Te)δ -doping technique
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