Photoluminescence and x‐ray photoelectron spectroscopy study of S‐passivated InGaAs(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363130
Reference19 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Structure and stability of passivating arsenic sulfide phases on GaAs surfaces
3. First-principles study of sulfur passivation of GaAs(001) surfaces
4. Sulfur passivation of GaAs surfaces
5. Structure of S on passivated GaAs (100)
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