An assessment of some theoretical models used for the calculation of the refractive index of In X Ga 1−x As

Author:

Engelbrecht J.A.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. 1.5-1.6 μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy;Temlin;Appl. Phys. Lett.,1983

2. New high-speed long-wavelength Al0.48In0.52As/Ga0.47In0.53As multiquantum well avalanche photodiodes;Mohammed,1985

3. Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators;Wakita;Electron. Lett.,1986

4. Photoluminescence and x-ray photoelectron spectroscopy study of S-passivated InGaAs(001);Geelhaar;J. Appl. Phys.,1996

5. Optical energy gap variation in GaxIn1−xAs alloys;Woolley;Can. J. Phys.,1968

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