Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1516631
Reference10 articles.
1. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
2. Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm
3. 324 nm Light Emitting Diodes with Milliwatt Powers
4. Accumulation hole layer in p-GaN/AlGaN heterostructures
5. GaN/AlGaN p-channel inverted heterostructure JFET
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