Temperature-dependent electroluminescence study on 265-nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates
Author:
Affiliation:
1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
2. UVC Project, Asahi Kasei Corporation, Fuji 416-8501, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0024179
Reference33 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides
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3. High power AlGaN ultraviolet light emitters
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5. Pushing the limits of deep-ultraviolet scanning near-field optical microscopy
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