Formation mechanism of interfacial Si–oxide layers during postannealing of Ta2O5/Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1334922
Reference22 articles.
1. Some properties of crystallized tantalum pentoxide thin films on silicon
2. Microstructure and Electrical Properties of Tantalum Oxide Thin Film Prepared by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
3. Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor
4. Interfacial Oxidation of Silicon Substrates Through Ta2 O 5 Films
5. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
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