The structural and electrical comparison of Y2O3 and Ti-doped Y2O3 dielectrics-Reference-Cited by-同舟云学术

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The structural and electrical comparison of Y2O3 and Ti-doped Y2O3 dielectrics

Published:2017-02 Issue:3 Volume:43 Page:3043-3050
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Lee Ming Ling,Kao Chyuan Haur,Chen Hsiang,Lin Chan Yu,Chung Yu Teng,Chang Kow Ming

Funder

Chang Gung University

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Atomic Layer deposition of lanthanum oxide films for high-k dielectrics;He;Electrochem. Solid State Lett.,2004

2. Praseodymium silicate formed by postdeposition high-temperature annealing;Sakai;Appl. Phys. Lett.,2004

3. Structural and electrical properties of electron beam gun evaporated Er2O3 insulator thin ﬁlms;Mikhelashvili;J. Appl. Phys.,2004

4. Hafnium titanate bilayer structure multimetal dielectric nMOSCAPs;Rhee;IEEE Electron Device Lett.,2006

5. Formation mechanism of interfacial Si-oxide layers during postannealing of Ta2O5/Si;Ono;J. Appl. Phys.,2001

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