Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation-Reference-Cited by-同舟云学术

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Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

Published:2015-04-27 Issue:17 Volume:106 Page:173110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ohno Takeo¹²,Samukawa Seiji¹³

Affiliation:

1. WPI - Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan

2. Japan Science and Technology Agency (JST), PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

3. Institute of Fluid Science (IFS), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan

Funder

PRESTO, JST, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4919724

Reference30 articles.

1. Reproducible switching effect in thin oxide films for memory applications

2. Quantized conductance atomic switch

3. Conductance quantization in oxygen-anion-migration-based resistive switching memory devices

4. The missing memristor found

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