Planar semipolar (101¯1) GaN on (112¯3) sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3442484
Reference21 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
3. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
4. Stability of (1\bar100)m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition
5. Metalorganic Vapor Phase Epitaxy Growth ofm-Plane GaN Using LiAlO2Substrates
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2. Growth of (101¯1) Semipolar GaN‐Based Light‐Emitting Diode Structures on Silicon‐on‐Insulator;physica status solidi (b);2023-03-18
3. S2-semipolar GaN grown by HVPE on a non-polar m-plane sapphire: Features of growth and structural, morphological, and optical properties;Optical Materials;2022-07
4. Freestanding-quality dislocation density in semipolar GaN epilayers grown on SOI: aspect ratio trapping;Applied Physics Express;2020-10-29
5. Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering;Bulletin of Materials Science;2019-06-19
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