Study of fluorine behavior in silicon by selective point defect injection
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1984094
Reference17 articles.
1. Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon
2. Fluorine-assisted super-halo for sub-50-nm transistors
3. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon;Journal of Applied Physics;2020-09-14
2. Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion;Materials Science and Engineering: B;2008-12
3. Evolution of fluorine and boron profiles during annealing in crystalline Si;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
4. Reduced boron diffusion under interstitial injection in fluorine implanted silicon;Journal of Applied Physics;2007-12
5. Effect of fluorine on boron diffusion under interstitial injection from the surface;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
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