Evolution of fluorine and boron profiles during annealing in crystalline Si-Reference-Cited by-同舟云学术

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Evolution of fluorine and boron profiles during annealing in crystalline Si

Published:2008 Issue:1 Volume:26 Page:377
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

López Pedro,Pelaz Lourdes,Duffy Ray,Meunier-Beillard P.,Roozeboom F.,van der Tak K.,Breimer P.,van Berkum J. G. M.,Verheijen M. A.,Kaiser M.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comprehensive model for the diffusion of boron in silicon in presence of fluorine;Solid-State Electronics;2013-09

2. TCAD simulation of the co-implantation species C, F, and N in MOS transistors;AIP Conference Proceedings;2012

3. Fluorine implantation in germanium for dopant diffusion control;AIP Conference Proceedings;2012

4. Optical properties of ion-implanted silicon and separation by implantation of oxygen silicon-on-insulator substrates in the infrared: Study of B+ and P2+ implantation doping;Thin Solid Films;2009-06

5. F+ implants in crystalline Si: the Si interstitial contribution;MRS Proceedings;2008

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