Polish‐induced damage in 〈100〉 GaAs: A comparison of transmission electron microscopy and Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344928
Reference4 articles.
1. Comprehensive investigation of polish‐induced surface strain in 〈100〉 and 〈111〉 GaAs and InP
2. Evaluation of Fabrication Damage in GaAs Wafers
3. Effects of As+ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation
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1. Subsurface damage evolution of β-Ga2O3 (010) substrates during lapping and chemical mechanical polishing;Surfaces and Interfaces;2024-08
2. Evaluation of polishing induced subsurface damage in InAs substrates by an acid solution etching method;Materials Science in Semiconductor Processing;2023-11
3. Deep Ultraviolet Raman Microspectroscopic Characterization of Polishing-Induced Surface Damage in SiC Crystals;Journal of The Electrochemical Society;2006
4. Micro-scribes in semi-insulating GaAs studied by cross-sectional transmission electron microscopy;Journal of Crystal Growth;1994-10
5. Triple crystal x‐ray diffraction analysis of chemical‐mechanical polished gallium arsenide;Journal of Applied Physics;1992-12
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