Writing charge into the n-type LaAlO3/SrTiO3 interface: A theoretical study of the H2O kinetics on the top AlO2 surface-Reference-Cited by-同舟云学术

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Writing charge into the n-type LaAlO3/SrTiO3 interface: A theoretical study of the H2O kinetics on the top AlO2 surface

Published:2012-12-17 Issue:25 Volume:101 Page:251605
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Feifei,Liang Meng,Du Wenli,Wang Mei,Feng Yexin,Hu Zhenpeng,Zhang Lixin,Wang E. G.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4772499

Reference16 articles.

1. Nanoscale control of an interfacial metal–insulator transition at room temperature

2. Metallic and Insulating Oxide Interfaces Controlled by Electronic Correlations

3. Charge Writing at the LaAlO3/SrTiO3 Surface

4. Oxide Nanoelectronics on Demand

5. Gate-Controlled Spin Injection atLaAlO3/SrTiO3Interfaces

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Surface Damage on pH Sensitivity of LaAlO₃/SrTiO₃ Heterostructure Device;Journal of The Electrochemical Society;2023-08-01

2. Dimensional Stacking for Machine Learning in ToF‐SIMS Analysis of Heterostructures;Advanced Materials Interfaces;2020-12-10

3. Exploring the LaAlO3/SrTiO3 Two-Dimensional Electron Gas;Semiconductor Nanocrystals and Metal Nanoparticles;2016-08-17

4. Screening mechanisms at polar oxide heterointerfaces;Reports on Progress in Physics;2016-06-16

5. Tunability of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface by strain-induced ferroelectricity;Physical Chemistry Chemical Physics;2016

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