Oxide Nanoelectronics on Demand

Author:

Cen Cheng12,Thiel Stefan12,Mannhart Jochen12,Levy Jeremy12

Affiliation:

1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA.

2. Experimental Physics VI, Center for Electronic Correlations and Magnetism, Institute of Physics, University of Augsburg, D-86135 Augsburg, Germany.

Abstract

Electronic confinement at nanoscale dimensions remains a central means of science and technology. We demonstrate nanoscale lateral confinement of a quasi–two-dimensional electron gas at a lanthanum aluminate–strontium titanate interface. Control of this confinement using an atomic force microscope lithography technique enabled us to create tunnel junctions and field-effect transistors with characteristic dimensions as small as 2 nanometers. These electronic devices can be modified or erased without the need for complex lithographic procedures. Our on-demand nanoelectronics fabrication platform has the potential for widespread technological application.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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