Mechanism of contact resistance formation in ohmic contacts with high dislocation density-Reference-Cited by-同舟云学术

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Mechanism of contact resistance formation in ohmic contacts with high dislocation density

Published:2012-04-15 Issue:8 Volume:111 Page:083701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sachenko A. V.,Belyaev A. E.,Boltovets N. S.,Konakova R. V.,Kudryk Ya. Ya.,Novitskii S. V.,Sheremet V. N.,Li J.,Vitusevich S. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3702850

Reference17 articles.

1. Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide

2. Mechanisms of current flow in metal-semiconductor ohmic contacts

3. Dependence of the mechanism of current flow in the in-n-GaN alloyed ohmic contact on the majority carrier concentration

4. Transport properties of low-resistance ohmic contacts to InP

5. Specific contact resistance of metal-semiconductor barriers

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4. Effect of barrier width between GaAs/InGaAs/GaAs double coupled quantum wells on bipolar transport and terahertz radiation by hot carriers in lateral electric field;Low Temperature Physics;2020-06

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