Effect of barrier width between GaAs/InGaAs/GaAs double coupled quantum wells on bipolar transport and terahertz radiation by hot carriers in lateral electric field
Author:
Affiliation:
1. Institute of Physics of the National Academy of Sciences of Ukraine, Kiev 03680, Ukraine
2. The Research Institute Physical-Technical of the Lobachevsky State University, Nizni Novgorod 603950, Russia
Publisher
AIP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/10.0001248
Reference23 articles.
1. Mechanism of THz Emission from Asymmetric Double Quantum Wells
2. Optimizing terahertz emission from double quantum wells
3. Lateral transport and far-infrared radiation of electrons in In x Ga1 − x As/GaAs heterostructures with the double tunnel-coupled quantum wells in a high electric field
4. Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels
5. InGaAs dual channel transistors with negative differential resistance
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