Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels-Reference-Cited by-同舟云学术

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Hot-electron real-space transfer and longitudinal transport in dual AlGaN/AlN/{AlGaN/GaN} channels

Published:2015-01-08 Issue:3 Volume:30 Page:035003
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Šermukšnis E,Liberis J,Matulionis A,Avrutin V,Ferreyra R,Özgür Ü,Morkoç H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=3/a=035003/pdf

Reference26 articles.

1. High-performance N-polar GaN enhancement-mode device technology

2. III-nitride microwave control devices and ICs

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods;Advanced Electronic Materials;2023-04-19

2. Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements;Monte Carlo Methods and Applications;2020-10-30

3. Effect of barrier width between GaAs/InGaAs/GaAs double coupled quantum wells on bipolar transport and terahertz radiation by hot carriers in lateral electric field;Low Temperature Physics;2020-06

4. Electrical modulation of terahertz radiation using graphene-phosphorene heterostructures;Semiconductor Science and Technology;2018-11-05

5. Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells;Semiconductor Physics, Quantum Electronics and Optoelectronics;2018-10-22

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