Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements-Reference-Cited by-同舟云学术

Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements

Published:2020-10-30 Issue:4 Volume:26 Page:263-271
ISSN:1569-3961
Container-title:Monte Carlo Methods and Applications
language:en
Short-container-title:

Author:

Kablukova Evgenia¹,Sabelfeld Karl²^ORCID,Protasov Dmitrii Y.³,Zhuravlev Konstantin S.⁴

Affiliation:

1. Institute of Computational Mathematics and Mathematical Geophysics , Siberian Branch of Russian Academy of Science, Lavrentiev Prosp. 6 , Novosibirsk , 630090 , Russia

2. Institute of Computational Mathematics and Mathematical Geophysics , Siberian Branch of Russian Academy of Science, Lavrentiev Prosp. 6; and Novosibirsk State University, Pirogov str. 2 , Novosibirsk , 630090 , Russia

3. Rzhanov Institute of Semiconductor Physics , Siberian Branch of Russian Academy of Sciences, Lavrentiev Prosp. 13, 630090; and Novosibirsk State Technical University, 20, K. Marx av. , Novosibirsk , 630073 , Russia

4. Rzhanov Institute of Semiconductor Physics , Siberian Branch of Russian Academy of Sciences, Lavrentiev Prosp. 13; and Novosibirsk State University, Pirogov Str. 2 , Novosibirsk , 630090 , Russia

Abstract

Abstract Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations.

Funder

Russian Science Foundation

Publisher

Walter de Gruyter GmbH

Subject

Applied Mathematics,Statistics and Probability

Link

https://www.degruyter.com/document/doi/10.1515/mcma-2020-2077/pdf

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