Hall Effect in Strong Electric Fields in AlGaAs/InGaAs/GaAs Heterostructures with Donor-Acceptor Doping-Reference-Cited by-同舟云学术

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Hall Effect in Strong Electric Fields in AlGaAs/InGaAs/GaAs Heterostructures with Donor-Acceptor Doping

Published:2023-06-29 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Kuznetsov Vadim A.¹,Protasov Dmitry Yu.¹,Kostyuchenko Vladimir Ya.²,Sabelfeld Karl K.³,Kablukova Evgeniya G.³

Affiliation:

1. Novosibirsk State Technical University Rzhanov Institute of Semiconductor Physics,Novosibirsk,Russia

2. Siberian State University of Geosystems and Technologies,Novosibirsk,Russia

3. Institute of Computational Mathematics and Mathematical Geophysics,Novosibirsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10224902/10225012/10225239.pdf?arnumber=10225239

Reference15 articles.

1. Physics of semiconductors [Fizika poluprovodnikov];stilbans;(in Russian) - M Sov radio,1967

2. GaAs Devices and Circuits

3. A device for measuring the Hall coefficient in strong electric fields [Ustroystvo izmereniya koeffitsiyenta Kholla v sil'nykh elektricheskikh polyakh];repshas;(in Russian) Invention Committee for Inventions and Discoveries under the Council of Ministers of the USSR,1973

4. Semiconductor Physics

5. Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements

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