Atomic scale study of the degradation mechanism of boron contaminated hafnium oxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2841658
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1. Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process;Journal of Materials Chemistry C;2014
2. Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment;Japanese Journal of Applied Physics;2011-04-20
3. Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO2 Gate Dielectric;MATERIALS TRANSACTIONS;2011
4. Chemical Bonding States of Plasma Nitrided High-k/Ge Gate Stack;Electrochemical and Solid-State Letters;2011
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