Recombination processes controlling the carrier lifetime in n−4H–SiC epilayers with low Z1/2 concentrations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3466745
Reference40 articles.
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3. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
4. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
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