Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation-Reference-Cited by-同舟云学术

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Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation

Published:2008-06-02 Issue:7 Volume:245 Page:1327-1336
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Kimoto Tsunenobu,Danno Katsunori,Suda Jun

Funder

Grant-in-Aid for the Fundamental Research

Global COE program (C09) from the Ministry of Education, Culture, Sports, Science and Technology, Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.200844076/fullpdf

Reference40 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Status and prospects for SiC power MOSFETs

3. Performance and Reliability Issues of SiC-Schottky Diodes

4. Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

5. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

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3. New equations to calculate carrier recombination lifetime of silicon epitaxial layer, based on open circuit voltage decay method;Japanese Journal of Applied Physics;2023-11-01

4. 4H-SiC Schottky barrier diodes as radiation detectors: A role of Schottky contact area;Diamond and Related Materials;2023-08

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