Ultrafast all-optical modulation in Fe-doped GaN at 1.31 and 1.55 μm with high contrast and ultralow power-Reference-Cited by-同舟云学术

Ultrafast all-optical modulation in Fe-doped GaN at 1.31 and 1.55 μm with high contrast and ultralow power

Published:2017-04-17 Issue:16 Volume:110 Page:161902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fang Yu¹²^ORCID,Yang Junyi²,Xiao Zhengguo³,Zhang Jiayong¹,Chen Yongqiang¹,Wu Quanying¹,Song Yinglin²

Affiliation:

1. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China

2. College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006, People's Republic of China

3. Department of Physics and Electronic Engineering, Tongren University, Tongren 554300, People's Republic of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4980090

Reference35 articles.

1. GaN Electronics

2. Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films

3. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

4. Design, fabrication, and optical characteristics of freestanding GaN waveguides on silicon substrate

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