Quasi-passive modulation for monolithic GaN photoelectronic circuit

Abstract

Due to the overlap between the electroluminescence spectrum and spectral responsivity curve, gallium nitride (GaN)-based multi-quantum well (MQW) diodes can modulate and detect light emitted by another diode with the same MQW structure. This enables the realization of a monolithic integrated GaN optoelectronic circuit, integrating an MQW-based transmitter, waveguide, modulator, and receiver on a tiny GaN chip. It is well known that the active region of MQW absorbs high-energy photons within the plane, generating electron-hole pairs and forming photogenerated carriers. The change in free carrier concentration causes variations in the refractive index and absorption characteristics of the waveguide, thereby manipulating light propagation within the waveguide. Based on this physical phenomenon, a quasi-passive modulation scheme is proposed for a monolithic GaN photoelectronic circuit. This scheme achieves optical modulation by connecting a variable resistor between the modulator electrodes, avoiding the need for high-precision external electric fields and complex control circuits. The performance of the quasi-passive modulation was tested through on-chip data transmission and real-time audio signal transmission. The results indicate that quasi-passive modulation is highly feasible in optoelectronic systems and shows great promise as a competitive core module for future large-scale photonic integrated circuits.