Low temperature photoluminescence characteristics of Zn-doped InP grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366966
Reference16 articles.
1. Photoluminescence studies of interstitial Zn in InP due to rapid thermal annealing
2. Photoluminescence of Zn‐diffused and annealed InP
3. Zinc doping in InP grown by atmospheric pressure metalorganic vapor phase epitaxy
4. Donor‐acceptor pair formation in InP doped simultaneously with Si and Zn during metalorganic chemical vapor deposition
5. A model for the Zn diffusion in GaAs by a photoluminescence study
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