Increasing the Energy Gap between Band‐Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots-Reference-Cited by-同舟云学术

Increasing the Energy Gap between Band‐Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots

Published:2021-10-11 Issue:52 Volume:17 Page:2102792
ISSN:1613-6810
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language:en
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Author:

Sung Young Mo¹,Kim Tae‐Gon¹,Yun Dong‐Jin¹,Lim Mihye¹,Ko Dong‐Su¹,Jung Changhoon¹,Won Nayoun¹,Park Sungjun¹,Jeon Woo Sung¹,Lee Hyo Sug¹,Kim Jung‐Hwa¹,Jun Shinae¹,Sul Soohwan¹^ORCID,Hwang Sungwoo¹

Affiliation:

1. Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd. 130 Samsung‐ro Suwon 16678 Republic of Korea

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202102792

Reference59 articles.

1. Semiconductor Clusters, Nanocrystals, and Quantum Dots

2. Auger-process-induced charge separation in semiconductor nanocrystals

3. Femtosecond1P-to-1SElectron Relaxation in Strongly Confined Semiconductor Nanocrystals

4. Quantization of Multiparticle Auger Rates in Semiconductor Quantum Dots

5. SPECTROSCOPY AND HOT ELECTRON RELAXATION DYNAMICS IN SEMICONDUCTOR QUANTUM WELLS AND QUANTUM DOTS

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