Deep level defects which limit current gain in 4H SiC bipolar junction transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2714285
Reference17 articles.
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2. Spin multiplicity and charge state of a silicon vacancy(TV2a)in4H-SiC determined by pulsed ENDOR
3. EPR studies of the isolated negatively charged silicon vacancies inn-type4H- and6H-SiC: Identification ofC3vsymmetry and silicon sites
4. Negatively charged Si vacancy in4HSiC: A comparison between theory and experiment
5. Intrinsic Defects in Cubic Silicon Carbide
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