Affiliation:
1. Pennsylvania State University
2. Keysight Technologies
Abstract
We show that electrically detected electron nuclear double resonance (EDENDOR) can be detected with relatively high signal-to-noise ratios in fully processed 4H-SiC bipolar junction transistors (BJTs). We observe EDENDOR of nitrogen interacting with recombination center defects in the depletion region of forward-biased emitter-base junctions of these devices at room temperature. Our results indicate that EDENDOR has great potential in the investigation of SiC-based devices specifically, as well as in the investigation of solid-state devices based upon other material systems.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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