Photoluminescence excitation spectroscopy yields band gap of Ga0.5In0.5P containing relatively ordered domains
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110201
Reference9 articles.
1. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
2. Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
3. Transmission electron microscopic study of the ordered structure in GaInP/GaAs epitaxially grown by metalorganic chemical vapor deposition
4. Substrate‐driven ordering microstructure in GaxIn1−xP alloys
5. Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P
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