Transmission electron microscopic study of the ordered structure in GaInP/GaAs epitaxially grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100287
Reference4 articles.
1. Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
2. Chemical ordering in GaxIn1−xP semiconductor alloy grown by metalorganic vapor phase epitaxy
3. Ordered structure in OMVPE-grown Ga0.5In0.5P
4. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
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