Surfactant-induced chemical ordering of GaAsN:Bi-Reference-Cited by-同舟云学术

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Surfactant-induced chemical ordering of GaAsN:Bi

Published:2018-11-19 Issue:21 Volume:113 Page:211602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Occena J.¹^ORCID,Jen T.¹^ORCID,Lu H.¹^ORCID,Carter B. A.¹,Jimson T. S.²,Norman A. G.³^ORCID,Goldman R. S.¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA

2. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA

3. National Renewable Energy Laboratory, Golden, Colorado 80401, USA

Funder

Division of Materials Research

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5045606

Reference28 articles.

1. Band Anticrossing in GaInNAs Alloys

2. Valence-band anticrossing in mismatched III-V semiconductor alloys

3. Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x

4. Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

5. Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission

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1. Ordering in GaAs co-doped with Bi and N;Physical Review Materials;2024-05-20

2. Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods;Journal of Crystal Growth;2022-07

3. Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy;physica status solidi (a);2021-11-16

4. Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys;Journal of Applied Physics;2020-11-21

5. Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys;Nanoscale Research Letters;2020-05-25

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