Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study inβ-Ga2O3-Reference-Cited by-同舟云学术

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Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current: A case study inβ-Ga2O3

Published:2020-11-30 Issue:22 Volume:117 Page:222104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Wenshen¹^ORCID,Nomoto Kazuki¹,Jena Debdeep¹²³^ORCID,Xing Huili Grace¹²³^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

3. Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0029348

Reference35 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Impact ionization in β-Ga2O3

3. Intrinsic electron mobility limits inβ-Ga2O3

4. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

5. Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

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1. Beta-Gallium Oxide Material and Device Technologies;Annual Review of Materials Research;2024-08-05

2. Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2024-04-10

3. β-Ga2O3 Schottky barrier height improvement using Ar/O2 plasma and HF surface treatments;Applied Physics Letters;2024-02-12

4. Photogating enhanced photodetectors dominated by rubrene nanodots modified SnS₂ films;2D Materials;2024-01-11

5. NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices;Applied Physics Letters;2023-05-01

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