Steady‐state mobility lifetimes and photoconductivity ina‐SiGe:H thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344991
Reference22 articles.
1. Comparison of the structural, electrical, and optical properties of amorphous silicon-germanium alloys produced from hydrides and fluorides
2. Electron and hole transport ina‐Si1−xGex:H alloys
3. Electronic Transport and the Density of States Distribution in a-(Si, Ge):H, F Alloys
4. The role of dangling bonds in the transport and recombination of a-Si:Ge: H alloys
5. Extended State Mobility and Tail State Distribution of a-Si1-xGex:H Alloys
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Current–Voltage Analysis of a-Si and a-SiGe Solar Cells Including Voltage-dependent Photocurrent Collection;Progress in Photovoltaics: Research and Applications;1997-05
2. Midgap states ina‐Si:H anda‐SiGe:Hp‐i‐nsolar cells and Schottky junctions by capacitance techniques;Journal of Applied Physics;1992-06-15
3. Characterization of a-Si:H and a-SiGe:H p-i-n and Schottky junctions by admittance circuit modeling;IEEE Transactions on Electron Devices;1992
4. Phototransport under the presence of a small steady-state photocarrier grating;Physical Review B;1990-11-15
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