The role of dangling bonds in the transport and recombination of a-Si:Ge: H alloys
Author:
Affiliation:
1. a Xerox Palo Alto Research Center , Palo Alto , California , 94303 , U.S.A.
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818708221318
Reference19 articles.
1. Existence of a universal low-energy tail in the photoluminescence ofa-Si1−xGex:H alloys
2. Ph.D. Thesis;Garcia-Colevatti J. L.,1985
3. Electronic Properties of Amorphous SixGe1−x:H Films
4. Zum Mechanismus des lichtelektrischen Prim�rstromes in isolierenden Kristallen
5. Electron and hole transport ina‐Si1−xGex:H alloys
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